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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
V GS = 0 V, I D = 250 μ A
V GS = 0 V, I D = - 250 μ A
I D = 250 μ A, Referenced to 25 ° C
I D = - 250 μ A, Referenced to 25 ° C
V DS = 16 V, V GS = 0 V
V DS = -16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
All
20
-20
12
-19
1
-1
100
V
mV/ ° C
μ A
nA
I GSSR
Gate-Body Leakage, Reverse V GS = -8 V, V DS = 0 V
All
-100
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 μ A
V DS = V GS , I D = -250 μ A
I D = 250 μ A, Referenced to 25 ° C
I D = - 250 μ A, Referenced to 25 ° C
V GS = 4.5 V, I D = 2.7 A
V GS = 4.5 V, I D = 2.7 A, T J = 125 ° C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Ch
0.4
-0.4
0.9
-0.9
-2.1
2.3
0.069
0.094
1.5
-1.5
0.08
0.13
V
mV/ ° C
?
V GS = 2.5 V, I D = 2.2 A
V GS = -4.5 V, I D = -1.6 A
V GS = -4.5 V, I D = -1.6 A, T J = 125 ° C
V GS = -2.5 V, I D = -1.3 A
N-Ch
P-Ch
P-Ch
P-Ch
0.093
0.141
0.203
0.205
0.12
0.17
0.27
0.25
I D(on)
On-State Drain Current
V GS = 4.5 V, V DS = 5 V
N-Ch
8
A
V GS = -4.5 V, V DS = -5 V
P-Ch
-8
g FS
Forward Transconductance
V DS = 5 V, I D = 2.7 A
N-Ch
7.7
S
Dynami c Characteristics
V DS = -5 V, I D = -1.9 A
P-Ch
4.5
C iss
Input Capacitance
N-Channel
N-Ch
325
pF
V DS = 10 V, V GS = 0 V, f = 1.0 MHz
P-Ch
315
C oss
Output Capacitance
P-Channel
N-Ch
P-Ch
75
65
pF
C rss
Reverse Transfer Capacitance V DS = 10 V, V GS = 0 V, f = 1.0 MHz
N-Ch
35
pF
P-Ch
24
FDC6327C, Rev. E
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